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AO5600E Complementary Enhancement Mode Field Effect Transistor
General Description
The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen Free ESD PROTECTED!
Features
n-channel VDS (V) = 20V, RDS(ON)< 0.65 RDS(ON)< 0.75 RDS(ON)< 0.95 p-channel VDS (V) = -20V, RDS(ON)< 0.8 RDS(ON)< 1.0 RDS(ON)< 1.3 ID = 0.6A (VGS=4.5V) (VGS= 4.5V) (VGS= 2.5V) (VGS= 1.8V) ID = -0.5A (VGS=-4.5V) (VGS= -4.5V) (VGS= -2.5V) (VGS= -1.8V)
D1 1 D2
S1 G1 D2
SC-89-6
D1 G2 S2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage 20 VDS Gate-Source Voltage Continuous Drain B,H Current Pulsed Drain Current Power Dissipation
B
Max p-channel -20 8 -0.5 -0.38 -1 0.38 0.24
Units V V A
VGS TC=25C TC=100C TC=25C TC=100C ID IDM PD TJ, TSTG 0.6 0.4 3 0.38 0.24
W C
Junction and Storage Temperature Range
-55 to 150
Thermal Characteristics: n-channel and p-channel Parameter A t 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 275 360 300 275 360 300
Max 330 450 350 330 450 350
Units C/W C/W C/W C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AO5600E
N-channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=20V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=2.5V, ID=0.5A VGS=1.8V, ID=0.3A gFS VSD IS Forward Transconductance VDS=5V, ID=0.5A Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 0.45 3 0.54 0.81 0.63 0.73 1.5 0.65 1 0.4 35 VGS=0V, VDS=10V, f=1MHz 8 6 0.63 VGS=4.5V, VDS=10V, ID=0.5A 0.08 0.16 4.5 VGS=5V, VDS=10V, RL=50, RGEN=3 IF=0.5A, dI/dt=100A/s 3.3 70 35 8 2 10 1 45 0.65 1 0.75 0.95 0.6 Min 20 1 5 1 100 1 Typ Max Units V A A V A S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=0.5A, dI/dt=100A/s
A: The value of R is measured with the device in a still on 1in 2 FR-4 board with 2oz. Copper, in a dissipation PDSM and current rating I DSM A: The value of R JA is measured with the device mountedair environment with T A =25C. The power still air environment with T A =25C. The are JA based on TJ(MAX)=150C, using the steady the junction-to-ambient design. The current value in any given application depends onstateuser's specific board thermal resistance. rating is based on the t 10s thermal resistance B. The rating. power dissipation PD is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for pulse width additional heatsinking is used. B: Repetitive rating,cases where limited by junction temperature. C: Repetitive rating, pulse width limited by junction temperature T lead =175C. C. The R JA is the sum of the thermal impedence from junction to J(MAX)R JL and lead to ambient. D. The RJA characteristics in Figures 1 to 6,12,14 are obtained case R JC s case to ambient. D. The staticis the sum of the thermal impedence from junction tousing <300 andpulses, duty cycle 0.5% max. E. The static characteristics in Figures 1 to 6 mounted on using <300 s pulses, duty cycle 0.5% still E. These tests are performed with the device are obtained 1 in 2 FR-4 board with 2oz. Copper, in amax.air environment with T A=25C. The SOA F. These curves single pulse rating. curve provides a are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a The maximum current rating is limited by bond-wires F. maximum junction temperature of T J(MAX)=175C. The SOA curve provides a single pulse rating.
2 G. These 2008 Rev5: Oct tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25C. H. The maximum current rating is limited by bond-wires.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5600E
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3 4.5V 3.5V 2 ID (A) 2.5V 1.5 2V ID(A) 1 25C 125C 2 VDS=5V
1
1.5V 0.5 VGS=1V
0 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics
0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1.8
0.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 0 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 175 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V ID=0.5A VGS=4.5V ID=0.5A VGS=1.8V ID=0.3A
0.7 RDS(ON) ( )
VGS=1.8V
0.6 VGS=2.5V 0.5 VGS=4.5V
0.4
1.2 ID=0.5A 1
1.0E+00 1.0E-01 125C 1.0E-02 IS (A) 125C 25C 1.0E-03 1.0E-04 1.0E-05
RDS(ON) ( )
0.8 25C 0.6
0.4 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
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AO5600E
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=10V ID=0.5A Capacitance (pF) 40 60
4 VGS (Volts)
3
Ciss
2
20
Coss
1 Crss 0 5 10 15 20
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Qg (nC) Figure 7: Gate-Charge Characteristics
0
VDS (Volts) Figure 8: Capacitance Characteristics
10.0 10s 10s Power (W) ID (Amps) 1.0 RDS(ON) limited 100s 1ms 0.1 DC 0.1s 10ms TJ(Max)=150C TA=25C 0.0 0.01 0.1 1 VDS (Volts) 10 1s 10s 100
14 12 10 8 6 4 2 0 0.0001 TJ(Max)=150C TA=25C
0.001
0.01
0.1
1
10
100
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=330C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO5600E
P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-20V, VGS=0V TJ=55C VDS=0V, VGS=4.5V VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-0.5A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-2.5V, ID=-0.5A VGS=-1.8V, ID=-0.3A gFS VSD IS Forward Transconductance VDS=-5V, ID=-0.51A Diode Forward Voltage IS=-0.1A,VGS=0V Maximum Body-Diode Continuous Current -1 -1 0.65 0.9 0.85 1.05 0.9 -0.66 -1 -0.5 72 VGS=0V, VDS=-10V, f=1MHz 17 9 60.5 VGS=-4.5V, VDS=-10V, RL=50, RGEN=3 IF=-0.5A, dI/dt=100A/s 150 612 436 27 8.3 35 100 0.8 1.1 1 1.3 -0.6 Min -20 1 5 1 10 -0.45 A S V A pF pF pF ns ns ns ns ns nC Typ Max Units V A A
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Output Capacitance Reverse Transfer Capacitance
SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) tf trr Qrr Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-0.5A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The maximum current rating is limited by bond-wires Rev5: Oct 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO5600E
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 -6V 4 -3.5V -ID(A) -4.5V -4V 2 -10V 3 VDS=-5V 25C
-ID (A)
3
2
-3V -2.5V
125C 1
1 VGS=-2.0V 0 0 1 2 3 4 5 -VDS (Volts) Figure 1: On-Region Characteristics 1.4 1.2 RDS(ON) ( ) VGS=-1.8V 1 0.8 0.6 0.4 0 0.2 0.4 0.6 0.8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance 1.6 0 0 1 2 3 4 5 -VGS(Volts) Figure 2: Transfer Characteristics
1.4
VGS=-1.8V
1.2 VGS=-2.5V VGS=-4.5V 1
VGS=-2.5V VGS=-4.5V
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
1.3 ID=-0.5A 1.1 125C -IS (A)
1.0E+00 1.0E-01 125C 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0 2 4 6 8 10 0.0 0.4 0.8 1.2 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts) Figure 6: Body-Diode Characteristics
RDS(ON) ( )
0.9
0.7 25C 0.5
0.3
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AO5600E
P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 VDS=-10V ID=-0.5A Capacitance (pF) 100 Ciss
4 -VGS (Volts)
80
3
60
2
40 Coss 20 Crss
1
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Qg (nC) Figure 7: Gate-Charge Characteristics
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
10.00
TJ(Max)=150C TA=25C
14 12 10 Power (W) 100s 8 6 4 2 0 0.0001 TJ(Max)=150C TA=25C
-ID (Amps)
1.00
0.10
RDS(ON) limited
1s 10s DC
1ms 10ms 0.1s
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 Z JA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=330C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO5600E
G ate C harge Test C ircuit & W aveform
V gs Qg
+
VD C
10V
VD C
DUT V gs Ig
+ V ds -
Q gs
Q gd
C harge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
td(on) ton tr td(off) t off tf
90%
10%
Vgs
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
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AO5600E
Gate Charge Test Circuit & Waveform
Vgs Qg -10V
VDC
VDC
DUT Vgs Ig
RL Vds Vgs Vgs Rg DUT
VDC
Vgs Vds
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Vds -
Isd Vgs
L
VDC
+ Vdd -Vds
Ig
Alpha & Omega Semiconductor, Ltd.
+
-
+
Charge
-
+
-
Vds
Qgs
Qgd
Resistive Switching Test Circuit & Waveforms
ton td(on) tr t d(off) toff tf
Vdd
90%
10%
Q rr = - Idt
-Isd
-I F
dI/dt -I RM Vdd
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